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Same model may have multiple batches, images only for reference.
TK17N65W,S1F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK17N65W,S1F

Part No TK17N65W,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 17.3A T0247 / Trans MOSFET N-CH Si 650V 17.3A 3-Pin(3+Tab) TO-247 Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 900μA
Gate Charge (Qg) (Maximum) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1800pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 165W (Tc)
Rds On (Maximum) @ Id, Vgs 200 mOhm @ 8.7A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 796831-TK17N65W,S1F
Popularity Medium
Supply and Demand Status Limited
Family Name TK17N65W
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK17N65W,S1F CAD Model

Description

The Toshiba Semiconductor and Storage TK17N65W,S1F is a DTMOSIV series MOSFET with a TO-247-3 package.

  • Continuous drain current: 17.3A @ 25°C
  • Maximum power dissipation: 165W
  • Channel type: N
  • Drain-source voltage: 650V
  • Gate charge (Qg): 45nC @ 10V
  • Input capacitance (Ciss): 1800pF @ 300V
  • Maximum gate-source voltage (Vgs): ±30V
  • Maximum Rds On: 200 mOhm @ 8.7A and 10V
  • Operating temperature range: 150°C (TJ)
  • Alternative to: IPW65R190CFDA, IPW65R190CFDAFKSA1, R6030MNZ1C9, and R6020KNZ4C13
  • EOL date: 2030

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16+ $7.4567 $119.3072
24+ $7.2245 $173.3880
34+ $6.9912 $237.7008
43+ $6.7579 $290.5897
58+ $6.0591 $351.4278
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MOQ: 7 pcs
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