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Same model may have multiple batches, images only for reference.
TK20J50D(F)
Same model may have multiple batches, images only for reference.

TK20J50D(F)

Part No TK20J50D(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 500V 20A 3-Pin(3+Tab) TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 20 A
Drain to Source Resistance 270 mΩ
Element Configuration Single
Fall Time 25 ns
Gate to Source Voltage (Vgs) 30 V
Height 19 mm
Input Capacitance 2.6 nF
Length 40.5 mm
Max Operating Temperature 150 °C
Max Power Dissipation 280 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 280 W
Radiation Hardening No
Rise Time 50 ns
RoHS Compliant
Turn-Off Delay Time 150 ns
Turn-On Delay Time 100 ns
Width 4.8 mm
Win Source Part Number 1191108-TK20J50D(F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK20J50D(F) CAD Model

Description

The Toshiba Semiconductor and Storage TK20J50D(F) is a MOSFET transistor that is widely used in RF applications.

  • Mounting Style: through-hole
  • Configuration: single element
  • Maximum Power Dissipation: 280 W
  • Continuous Drain Current: 20 A
  • Gate to Source Voltage: 30 V
  • Drain to Source Resistance: 270 mΩ
  • Rise Time: 50 ns
  • Fall Time: 25 ns
  • Turn-On Delay Time: 100 ns
  • Turn-Off Delay Time: 150 ns
  • Input Capacitance: 2.6 nF
  • RoHS Compliant: yes
  • Supply and Demand: limited

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Quantity Unit Price Ext. Price
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70+ $1.4329 $100.3030
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2986 $253.2270
260+ $1.1642 $302.6920
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Availability: 62,280 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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