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TK22E10N1,S1X Toshiba Semiconductor and Storage TK22E10N1,S1X label picture TK22E10N1,S1X Real Image
Same model may have multiple batches, images only for reference.
TK22E10N1,S1X Toshiba Semiconductor and Storage TK22E10N1,S1X label picture TK22E10N1,S1X Real Image
TK22E10N1,S1X Toshiba Semiconductor and Storage TK22E10N1,S1X label picture TK22E10N1,S1X Real Image
Same model may have multiple batches, images only for reference.

TK22E10N1,S1X

Part No TK22E10N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 52A TO220
Datasheet
TK22E10N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 300μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 1800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 72W (Tc)
Maximum Rds On at Id,Vgs 13.8 mOhm @ 11A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1107426-TK22E10N1,S1X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK22E10N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage TK22E10N1,S1X MOSFET is a through hole mounting device with an N-Channel polarity.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 52A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 13.8 mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 4V @ 300μA
  • Maximum Gate Charge: 28nC @ 10V
  • Package: TO-220-3
  • Maximum Power Dissipation: 72W (Tc)
  • Supply and Demand: balanced

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145+ $0.8090 $117.3050
225+ $0.7837 $176.3325
305+ $0.7584 $231.3120
395+ $0.7331 $289.5745
530+ $0.6572 $348.3160
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