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TK290A60Y,S4X

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Part No	TK290A60Y,S4X
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 11.5A TO220SIS / N-Channel 600 V 11.5A (Tc) 35W (Tc) Through Hole TO-220SIS
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSV
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	290mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	730 pF @ 300 V
Power Dissipation (Max)	35W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK290A60
MSL Level	Not Applicable
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	TK290A60Y,S4X(S,TK290A60YS4X(S,TK290A60YS4X
Standard Package	50
Win Source Part Number	1099436-TK290A60Y,S4X
Ultra Librarian 3D Model	Ultra Librarian TK290A60Y,S4X CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage 999258 is a MOSFET (Metal Oxide) transistor with a Win Source Part Number of 1099436-TK290A60Y,S4X.

Category: Discrete Semiconductor Products, Transistors - FETs, MOSFETs - Single
FET Type: N-Channel FET
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Power Dissipation (Max): 35W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Temperature Range: 150°C (TJ)
Mounting Type: Through Hole

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