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TK2P60D

Part No TK2P60D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 2A 3-Pin(2+Tab) New PW-Mold / MOSFET N-CH 600V 2A PW-MOLD
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 4.3 Ohm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PW-MOLD
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 212873-TK2P60D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name TK2P60D
Introduction Date April 06, 2010
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian TK2P60D CAD Model

Description

The Toshiba Semiconductor and Storage TK2P60D is an N-channel MOSFET with a maximum power dissipation of 60W.

  • GPTDescription: It has a maximum drain-source breakdown voltage of 600V and a continuous drain current of 2A @ 25°C.
  • GPTDescription: The TK2P60D has a gate-source threshold voltage of 4.4V @ 1mA and a maximum gate charge of 7nC @ 10V.
  • GPTDescription: It can operate in a temperature range of 150°C (TJ) and comes in a PW-MOLD package with TO-252-3, DPak (2 Leads + Tab), SC-63 dimensions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2021 $58.6090
695+ $0.1663 $115.5785
1,080+ $0.1605 $173.3400
1,485+ $0.1559 $231.5115
1,925+ $0.1502 $289.1350
2,565+ $0.1351 $346.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,740 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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