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Same model may have multiple batches, images only for reference.
TK30A06N1 Real Image
Same model may have multiple batches, images only for reference.

TK30A06N1

Part No TK30A06N1
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A TO-220
Datasheet
TK30A06N1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 200μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 1050pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 043101-TK30A06N1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK30A06N1 CAD Model

Description

The Toshiba Semiconductor and Storage TK30A06N1 is an N-channel MOSFET transistor.

  • Designed for: applications such as switching regulators, DC-DC converters, and motor control.
  • Case/Package: TO-220SIS with an isolated tab
  • Mounting: through-hole
  • Maximum Drain-Source Breakdown Voltage: 60V
  • Maximum Continuous Drain Current at 25°C: 30A (Tc)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5379 $59.1690
265+ $0.4414 $116.9710
410+ $0.4276 $175.3160
560+ $0.4139 $231.7840
725+ $0.4000 $290.0000
970+ $0.3587 $347.9390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,270 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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