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Same model may have multiple batches, images only for reference.
TK31J60W5,S1VQ
Same model may have multiple batches, images only for reference.

TK31J60W5,S1VQ

Part No TK31J60W5,S1VQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 600V 30.8A TO3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Case / Package TO-3P-3, SC-65-3
Package Tube
Supply and Demand Status Shortage
Win Source Part Number 1494947-TK31J60W5,S1VQ
Ultra Librarian 3D Model Ultra Librarian TK31J60W5,S1VQ CAD Model

Description

N

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