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TK40S06N1L,LQ

Part No TK40S06N1L,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 40A DPAK / N-Channel 60 V 40A (Ta) 88.2W (Tc) Surface Mount DPAK+
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1650 pF @ 10 V
Power Dissipation (Max) 88.2W (Tc)
Temperature Range - Operating 175°C
Mounting SMD (SMT)
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TK40S06
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 264-TK40S06N1LLQTR
Standard Package 2,000
Win Source Part Number 1151317-TK40S06N1L,LQ
Ultra Librarian 3D Model Ultra Librarian TK40S06N1L,LQ CAD Model

Description

The Toshiba Semiconductor and Storage TK40S06N1L,LQ is a MOSFET transistor that is used in various applications.

  • Drain to Source Voltage: 60 V
  • Current-Continuous Drain: 40A @ 25°C
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200μA
  • Operating Temperature: 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3539 $58.8475
60+ $1.9312 $115.8720
93+ $1.8711 $174.0123
128+ $1.8110 $231.8080
166+ $1.7498 $290.4668
221+ $1.5696 $346.8816
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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