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TK4A60D(STA4,Q,M)

Part No TK4A60D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO-220SIS / Trans MOSFET N-CH Si 600V 4A 3-Pin(3+Tab) TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 35W (Tc)
Rds On (Maximum) @ Id, Vgs 1.7 Ohm @ 2A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack
Win Source Part Number 777943-TK4A60D(STA4,Q,M)
Popularity Medium
Supply and Demand Status Limited
Family Name TK4A60D
Introduction Date March 01, 2009
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian TK4A60D(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK4A60D(STA4,Q,M) is a π-MOSVII technology MOSFET from Toshiba Semiconductor and Storage.

  • Continuous Drain Current: 4A (Ta)
  • Drain Source Voltage: 600V
  • Gate Charge: 12nC @ 10V
  • Input Capacitance: 600pF @ 25V
  • Power Dissipation: 35W (Tc)
  • Rds On: 1.7 Ohm @ 2A, 10V (Maximum)
  • Package: TO-220-3 Full Pack
  • Operating Temperature: 150°C (TJ)
  • Compliance: REACH
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4042 $50.5250
305+ $0.3316 $101.1380
470+ $0.3213 $151.0110
645+ $0.3109 $200.5305
835+ $0.3005 $250.9175
1,115+ $0.2695 $300.4925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,100 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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