The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel device with a drain-source breakdown voltage of 600V.

• It has a continuous drain current of 3.5A @ 25°C and a maximum gate charge of 11nC @ 10V.
• The device is designed for use in discrete semiconductor products and has a through-hole mounting style.
• It is packaged in a TO-220SIS case, which is a TO-220-3 full pack.
• The MOSFET has a maximum input capacitance of 490pF @ 25V and a maximum gate-source voltage of ±30V.
• The device has a maximum Rds On of 2.2 Ohm @ 1.8A and 10V.
• It operates @ a temperature range of 150°C (TJ) and has a gate-source threshold voltage of 4.4V @ 1mA.
• The supply and demand status of the device is balanced.