The Toshiba Semiconductor and Storage MOSFET is a N-Channel polarity electronic component with a maximum power dissipation of 35W (Tc).

• It has a drain-source breakdown voltage of 650V and a continuous drain current of 3.5A (Ta) @ 25°C.
• The gate-source threshold voltage is 4.4V @ 1mA and the maximum gate charge is 12nC @ 10V.
• The maximum input capacitance is 600pF @ 25V and the maximum Rds On @ Id,Vgs is 1.9 Ohm @ 1.8A, 10V.
• This MOSFET is packaged in a TO-220SIS case and is mountable through hole.
• It is designed for use in discrete semiconductor products and has a drive voltage (Max Rds On, Min Rds On) of 10V.
• The operating temperature range is up to 150°C (TJ).