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Same model may have multiple batches, images only for reference.
TK50J60U(Q)
Same model may have multiple batches, images only for reference.

TK50J60U(Q)

Part No TK50J60U(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 50 A
Drain to Source Voltage (Vdss) 600 V
Fall Time 17 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 4.05 nF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 400 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Packaging Bulk
Power Dissipation 400 W
Radiation Hardening No
Rds On Max 65 mΩ
Rise Time 90 ns
RoHS Compliant
Win Source Part Number 1007998-TK50J60U(Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK50J60U(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 1007998-TK50J60U(Q) is a through-hole transistor with a drain to source voltage of 600 V and a maximum power dissipation of 400 W.

  • Voltage (Drain to Source): 600 V
  • Power Dissipation: 400 W
  • Continuous Drain Current: 50 A
  • Gate to Source Voltage: 30 V
  • Lead-Free: true
  • RoHS Compliant: true
  • Pins: 3
  • Input Capacitance: 4.05 nF
  • Rds On Max: 65 mΩ

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