The TPCC8105L1Q(CM is a P-channel MOSFET transistor with a drain to source voltage of 30V and a continuous drain current of 23A @ 25°C.

• Channel Type: P-Channel
• Drain to Source Voltage: 30V
• Continuous Drain Current: 23A @ 25°C
• Rds on (Max): 7.8mOhm @ 11.5A, 10V
• Vgs(th) (Max): 2V @ 500μA
• Power Dissipation: 700mW (Ta), 30W (Tc)
• Series: U-MOSVI
• Gate Charge: 76nC @ 10Vgs
• Input Capacitance: 3240pF @ 10Vds
• Vgs (Max): +20V, -25V
• Mounting Type: Surface Mount
• Package/Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• HTSUS: 8541.29.0095
• Manufacturer: Toshiba Semiconductor and Storage