This electronic component is a MOSFET manufactured by Toshiba Semiconductor and Storage.

• Packaging: tube/rail
• Mounting: through hole
• Status: balanced supply and demand status
• Power Dissipation (Max): 168W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Status: active status
• Operating Temperature Range: 150°C (TJ)
• Case/Package: TO-220
• Dimension: TO-220-3
• Drain-Source Breakdown Voltage: 120V
• Continuous Drain Current @ 25°C: 56A (Ta)
• Gate-Source Threshold Voltage: 4V @ 1mA
• Max Gate Charge: 69nC @ 10V
• Max Input Capacitance: 4200pF @ 60V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id, Vgs: 7 mOhm @ 28A, 10V