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Same model may have multiple batches, images only for reference.
TK5A60W5,S5VX
Same model may have multiple batches, images only for reference.

TK5A60W5,S5VX

Part No TK5A60W5,S5VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description PB-F POWER MOSFET TRANSISTOR TO-
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 11.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 300 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1099464-TK5A60W5,S5VX
Ultra Librarian 3D Model Ultra Librarian TK5A60W5,S5VX CAD Model

Description

The Toshiba Semiconductor and Storage 1099464-TK5A60W5,S5VX is a single MOSFET transistor in a TO-220-3 Full Pack package.

  • Series: DTMOSIV
  • Application: Discrete Semiconductor Products, FET applications
  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 4.5A @ 25°C
  • Rds On: 950mOhm @ 2.3A and 10V
  • Gate Threshold Voltage: 4.5V @ 230μA
  • Maximum Power Dissipation: 30W
  • Mounting Type: Through-Hole
  • Status: Active

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