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Same model may have multiple batches, images only for reference.
MT3S20TU(TE85L) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

MT3S20TU(TE85L)

Part No MT3S20TU(TE85L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS RF NPN 7GHZ 80MA UFM / Trans RF BJT NPN 12V 0.08A 900mW 3-Pin UFM T/R
Datasheet
MT3S20TU(TE85L) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel package
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.45dB @ 20mA, 5V
Gain 12dB
Power - Max 900mW
DC Current Gain (hFE) (Minimum) @ Ic, Vce 100 @ 50mA, 5V
Current - Collector (Ic) (Maximum) 80mA
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package 3-SMD, Flat Leads
Manufacturer Package UFM
Win Source Part Number 790018-MT3S20TU(TE85L)
Popularity Medium
Supply and Demand Status Limited
Family Name MT3S20TU
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian MT3S20TU(TE85L) CAD Model

Description

The Toshiba Semiconductor and Storage MT3S20TU(TE85L) is an NPN transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 900mW
  • Maximum Collector-Emitter Breakdown Voltage: 12V
  • DC Current Gain (hFE): 100 @ 50mA, 5V
  • RoHS Compliant: Yes
  • Operating Temperature Range: -55°C to 150°C

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