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TK5A90E,S4X

Part No TK5A90E,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Souring
Description MOSFET Pb-F Power MOSFET Transistor TO-220SIS PD=40W F=1MHZ
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1469432-TK5A90E,S4X
Manufacturer Toshiba Semiconductor and Storage
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Operating Temperature 150°C
Grade -
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Ultra Librarian 3D Model Ultra Librarian TK5A90E,S4X CAD Model

Description

The TK5A90E,S4X, part of Toshiba's environmentally conscious product line, is a lead-free Power MOSFET transistor designed for high efficiency and performance. Operating with a power dissipation of 40 Watts and at a frequency of 1 MHz, this MOSFET is a solid choice for applications requiring fast switching and power handling capabilities. Enclosed in a TO-220SIS package, it provides a balance between robustness and performance efficiency. The TK5A90E,S4X is particularly tailored for powering high-performance computing devices, networking equipment, and renewable energy systems, where efficient energy conversion is critical. Its design prioritizes low on-resistance and high-speed operation, ensuring minimal power loss and maximum reliability in sustainable technology solutions.

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