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Same model may have multiple batches, images only for reference.
TK65G10N1RQ(S
Same model may have multiple batches, images only for reference.

TK65G10N1RQ(S

Part No TK65G10N1RQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 136A 3-Pin(2+Tab) D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package D2PAK
Continuous Drain Current (ID) 136 A
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Power Dissipation 156 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 969004-TK65G10N1RQ(S
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK65G10N1RQ(S CAD Model

Description

The TK65G10N1RQ(S) is a single N-channel MOSFET transistor with a continuous drain current of 136 A from Toshiba Semiconductor and Storage.

  • Continuous Drain Current: 136 A
  • Application: RF
  • Maximum Power Dissipation: 156 W
  • Package: D2PAK
  • Mounting Type: Surface Mountable
  • RoHS: Yes
  • Popularity: Low
  • Supply and Demand Status: Shortage

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45+ $2.5676 $115.5420
70+ $2.4867 $174.0690
96+ $2.4070 $231.0720
125+ $2.3262 $290.7750
167+ $2.0859 $348.3453
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Availability: 1,084 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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