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Same model may have multiple batches, images only for reference.
TK6P60W,RVQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK6P60W,RVQ

Part No TK6P60W,RVQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 6.2A DPAK
Datasheet
TK6P60W,RVQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 310μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 390pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 820 mOhm @ 3.1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 114302-TK6P60W,RVQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK6P60W,RVQ CAD Model

Description

The TK6P60W,RVQ is a N-channel Super Junction MOSFET from Toshiba Semiconductor and Storage. The component is a surface-mount device with a DPAK package.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 6.2A @ 25°C
  • Gate-Source Threshold Voltage: 3.7V @ 310μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 390pF @ 300V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id, Vgs: 820 mOhm @ 3.1A, 10V
  • Category: Discrete Semiconductor Products
  • Status: active product

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28+ $10.4608 $292.9024
37+ $9.3786 $347.0082
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