The Toshiba Semiconductor and Storage MOSFET is a high-performance N-Channel power MOSFET with a maximum power dissipation of 30W (Tc).

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 7A (Ta) @ 25°C
• Maximum Rds On: 650 mOhm @ 3.5A, 10V
• Gate-Source Threshold Voltage: 4.5V @ 350μA
• Maximum Gate Charge: 16nC @ 10V
• Maximum Input Capacitance: 490pF @ 300V
• Description: This MOSFET is designed for use in various applications, including discrete semiconductor products, and is mounted through hole.
• Case/Package: TO-220SIS
• Dimension: TO-220-3 full pack, isolated tab dimension
• Supply and Demand Status: limited