The Toshiba Semiconductor and Storage TK8A50D(STA4,Q,M) is a high-quality MOSFET designed for various applications.

• Discrete Semiconductor Product: discrete semiconductor product
• Polarity: N-Channel
• Power Dissipation: 40W (Tc)
• Maximum Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current at 25°C: 8A (Ta)
• Gate-Source Threshold Voltage: 4V @ 1mA
• Maximum Gate-Source Voltage: ±30V
• Maximum Rds On at Id,Vgs: 850 mOhm @ 4A, 10V
• Popularity: medium popularity
• Supply and Demand Status: balanced
• Case/Package: TO-220SIS case/package
• Dimension: TO-220-3 Full Pack
• Mounting: through hole
• Drive Voltage: 10V (Max Rds On, Min Rds On)
• Maximum Gate Charge: 16nC @ 10V
• Maximum Input Capacitance: 800pF @ 25V