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Same model may have multiple batches, images only for reference.
TK8A60D Real Image
Same model may have multiple batches, images only for reference.

TK8A60D

Part No TK8A60D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.5A TO-220SIS
Datasheet
TK8A60D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 056659-TK8A60D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK8A60D CAD Model

Description

The TK8A60D is an N-channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Power Dissipation: 45W
  • Status: active product in the market
  • Description: This transistor is ideal for use in power supplies, motor control circuits, and other high-power applications.
  • Supply and Demand Status: balanced
  • Popularity: medium in the market

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,120 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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