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TLP385(D4GR-TLE(T

Part No TLP385(D4GR-TLE(T
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (T - Z)
Description Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin SO T/R
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Win Source Part Number 964764-TLP385(D4GR-TLE(T
Categories OEM Parts(T-Z)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TLP385(D4GR-TLE(T CAD Model

Description

The TLP385(D4GR-TLE(T) is a high-isolation voltage, miniature flat package photocoupler from Toshiba Semiconductor and Storage. This device features a gallium arsenide infrared emitting diode (LED) optically coupled to a phototransistor. It is designed for applications requiring electrical isolation between input and output, such as in industrial control systems, power supplies, and telecommunications equipment. The small footprint and high isolation voltage make it suitable for space-constrained and safety-critical applications.

Applications:

  • Programmable Logic Controllers (PLCs)
  • Inverter control circuits
  • AC/DC power supplies
  • DC/DC converters
  • Digital logic isolation
  • Telecommunication equipment

Features:

  • High isolation voltage: 3750 Vrms (min)
  • Small flat package
  • Operating temperature: -55 to 110°C
  • Current transfer ratio: 50% (min)
  • UL recognized: UL1577
  • RoHS compliant

Benefits:

  • Enhanced safety due to high isolation voltage
  • Space-saving design for compact applications
  • Reliable operation in harsh environments due to wide operating temperature range
  • Efficient signal transfer due to high current transfer ratio
  • Compliance with safety standards
  • Environmentally friendly due to RoHS compliance

Additional Details:

The TLP385(D4GR-TLE(T) is available in a 4-pin SO package. The forward current (IF) is typically 20mA, and the collector-emitter voltage (VCEO) is 80V. The device is designed to provide reliable electrical isolation and signal transfer in a variety of industrial and consumer applications. The creepage and clearance distances are optimized for high-voltage isolation. The internal insulation thickness is designed to withstand transient overvoltages.

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