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TLPGE1100B

Part No TLPGE1100B
Manufacturer Toshiba Semiconductor and Storage
Catalog HOT - SALES and EOL Components (T)
Description Panel Circuit Indicator
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 370825-TLPGE1100B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TLPGE1100B CAD Model

Description

The TLPGE1100B is an IGBT gate drive photocoupler from Toshiba Semiconductor and Storage. It is designed to provide reinforced insulation and high-speed switching for IGBTs (Insulated Gate Bipolar Transistors) and power MOSFETs used in various power electronics applications.

Applications

  • Inverter Circuits: Used in solar inverters, motor drives, and uninterruptible power supplies (UPS) to drive IGBTs.
  • Motor Drives: Employed in industrial motor drives to provide isolated gate drive signals to IGBTs.
  • Power Supplies: Used in high-power power supplies to isolate control circuitry from the power stage.
  • Welding Machines: Integrated into welding machines to control the power delivered to the welding arc.
  • Induction Heating: Utilized in induction heating systems to drive the IGBTs that generate the high-frequency current.

Features

  • High Isolation Voltage: Provides reinforced insulation with a high isolation voltage, ensuring safety and preventing high-voltage transients from affecting the control circuitry.
  • High-Speed Switching: Offers fast switching speeds, enabling efficient operation of IGBTs at high frequencies.
  • High Output Current: Delivers a high output current to drive IGBT gates directly.
  • Undervoltage Lockout (UVLO): Includes UVLO protection to prevent IGBTs from operating under insufficient gate voltage conditions.
  • Short-Circuit Protection: Some versions may incorporate short-circuit protection to safeguard IGBTs from damage.

Benefits

  • Enhanced Safety: High isolation voltage provides enhanced safety for both the operator and the equipment.
  • Improved Efficiency: Fast switching speeds reduce switching losses, leading to improved efficiency.
  • Increased Reliability: UVLO protection and short-circuit protection enhance the reliability of the system.
  • Simplified Design: Direct IGBT gate drive simplifies the design of power electronic circuits.
  • Reduced EMI: High common-mode transient immunity (CMTI) reduces the risk of electromagnetic interference (EMI).

Additional Details

The TLPGE1100B typically operates with a supply voltage suitable for standard control circuits. It offers precise timing characteristics, ensuring accurate control of IGBT switching. The device is designed to comply with relevant safety standards, ensuring safe operation in demanding applications. Its robust design and advanced features make it a reliable choice for high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2442 $67.3260
65+ $1.8411 $119.6715
100+ $1.7833 $178.3300
135+ $1.7267 $233.1045
175+ $1.6690 $292.0750
235+ $1.4957 $351.4895
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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