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TMBT3906

Part No TMBT3906
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1531
Reference case SOT-23
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 716738-TMBT3906
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TMBT3906 CAD Model

Description

The TMBT3906 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This transistor is commonly used in low-power circuits where a small signal needs to be amplified or a switch needs to be controlled. It is characterized by its low saturation voltage and relatively high current gain, making it suitable for a wide range of electronic devices.

Applications

  • Low-Power Amplifiers: Used as small-signal amplifiers in audio circuits and other low-power applications.
  • Switching Circuits: Employed as a switch to control the flow of current in various electronic circuits.
  • Driver Circuits: Used as a driver transistor to control larger loads, such as relays or LEDs.
  • Complementary Circuits: Often used in conjunction with NPN transistors to create complementary amplifier or switching circuits.
  • General-Purpose Electronics: Applied in various general-purpose electronic projects and hobbyist circuits.

Features

  • PNP Transistor: A PNP bipolar junction transistor.
  • Low Saturation Voltage: Minimizes voltage drop when the transistor is fully turned on.
  • High Current Gain (hFE): Provides significant amplification of the base current.
  • Small Package: Typically available in a small surface-mount package (e.g., SOT-23) for compact designs.
  • High Collector Current: Capable of handling a moderate amount of collector current.
  • Fast Switching Speed: Relatively fast switching speed for switching applications.

Benefits

  • Signal Amplification: Amplifies weak signals for improved circuit performance.
  • Efficient Switching: Provides efficient switching with minimal voltage drop.
  • Compact Design: Small package allows for use in space-constrained applications.
  • Versatile Applications: Suitable for a wide range of amplification and switching applications.
  • Cost-Effective: Generally a low-cost component, making it suitable for budget-conscious designs.

Additional Details

The TMBT3906 is typically specified by its DC current gain (hFE), collector-emitter saturation voltage (VCE(sat)), and collector current (IC). These parameters are crucial for selecting the transistor for a specific application. It's important to consider the power dissipation rating to ensure that the transistor is not overheated. The transistor is commonly used in circuits with supply voltages ranging from 3V to 12V. Proper biasing is essential for achieving the desired performance in amplifier circuits. It is also frequently used in simple inverter circuits and as a high-side switch.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8,335+ $0.0069 $57.5115
20,000+ $0.0058 $116.0000
30,000+ $0.0058 $174.0000
40,000+ $0.0058 $232.0000
50,000+ $0.0058 $290.0000
75,000+ $0.0046 $345.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 98,000 pieces
MOQ: 8335 pcs
Order Increment : 1 pcs
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