The TMM2015BP-90 is a static random-access memory (SRAM) component manufactured by Toshiba Semiconductor and Storage. This SRAM is organized as 65,536 words by 8 bits, resulting in a total memory capacity of 512 kbit. It's designed for applications where moderate speed and low power consumption are important.

Applications

• Microcontroller systems
• Embedded systems
• Data logging devices
• Portable instruments
• Industrial control systems

Features

• Organization: 65,536 words x 8 bits (512 kbit)
• Access Time: 90 ns
• Supply Voltage: 5V
• Operating Current: Designed for low power operation
• Standby Current: Very low standby current for battery-backed applications
• Package: DIP or SOIC (check datasheet for specific package)
• Operating Temperature: -40°C to +85°C (Industrial temperature range)

Benefits

• Low Power Consumption: Extends battery life in portable devices and minimizes heat dissipation.
• Moderate Speed: 90 ns access time is suitable for a wide range of applications.
• Ample Capacity: 512 kbit storage provides sufficient space for program and data storage.
• Easy Integration: Standard SRAM interface allows for easy integration into existing systems.
• High Reliability: Designed for reliable operation in various environments.

Additional Details

The TMM2015BP-90 SRAM provides a good balance between speed and power consumption, making it a versatile memory solution for various embedded applications. Its low standby current makes it particularly suitable for battery-backed systems where data retention is critical. The package type (DIP or SOIC) depends on the specific variant; consult the Toshiba datasheet for precise package details and pinout information.

Key Specifications:

• Memory Size: 512 kbit
• Organization: 65,536 words x 8 bits
• Access Time: 90 ns
• Supply Voltage: 5 V ± 10%
• Operating Temperature: -40°C to +85°C
• Data Retention Voltage: 2 V (typical)