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TPC6104

Part No TPC6104
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.5A VS6 2-3T1A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 200μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 1430pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 2.8A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 043255-TPC6104
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC6104 CAD Model

Description

The Toshiba Semiconductor and Storage TPC6104 is a P-Channel MOSFET that belongs to the Discrete Semiconductor Products category.

  • Popularity: medium
  • Supply and demand status: sufficient, despite being obsolete
  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 5.5A

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 184,600 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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