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TPC6110(TE85L,F,M)

Part No TPC6110(TE85L,F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.5A VS6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Ta)
Gate-Source Threshold Voltage 2V @ 100μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 510pF @ 10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 56 mOhm @ 2.2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 213261-TPC6110(TE85L,F,M)
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian TPC6110(TE85L,F,M) CAD Model

Description

The Toshiba Semiconductor and Storage TPC6110(TE85L,F,M) is a P-channel MOSFET with a maximum power dissipation of 700mW (Ta) and a temperature range of 150°C (TJ).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.5A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 100μA
  • RoHS Compliant: Yes
  • Package: VS-6 (2.9x2.8)
  • Maximum Rds On @ Id,Vgs: 56 mOhm @ 2.2A, 10V
  • Quantity per package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3449 $60.2082
43+ $2.7443 $118.0049
66+ $2.6588 $175.4808
90+ $2.5733 $231.5970
117+ $2.4867 $290.9439
156+ $2.2303 $347.9268
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,300 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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