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Same model may have multiple batches, images only for reference.
TPC6110(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC6110(TE85L,F)

Part No TPC6110(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.5A VS6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Ta)
Gate-Source Threshold Voltage 2V @ 100μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 510pF @ 10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 56 mOhm @ 2.2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 056764-TPC6110(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC6110(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage TPC6110(TE85L,F) is a MOSFET with P-Channel polarity.

  • Power Dissipation: 700mW (Ta)
  • Continuous Drain Current @ 25°C: 4.5A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 100μA
  • Maximum Gate Charge: 14nC @ 10V
  • Popularity: medium
  • Supply and demand status: balance
  • Packaging: reel - TR
  • Mounting: SMD (SMT) technology
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 56 mOhm @ 2.2A, 10V
  • Type: discrete semiconductor product
  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 056764-TPC6110(TE85L,F)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9390 $61.0350
150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
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Availability: 3,000 pieces
MOQ: 65 pcs
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