TPC6110(TE85L,F)

Part No TPC6110(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.5A VS6
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Ta)
Gate-Source Threshold Voltage 2V @ 100μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 510pF @ 10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 56 mOhm @ 2.2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 056764-TPC6110(TE85L,F)
Popularity Medium
Supply and Demand Status Balance

Description

The Toshiba Semiconductor and Storage TPC6110(TE85L,F) is a MOSFET with P-Channel polarity. It has a maximum power dissipation of 700mW (Ta) and a continuous drain current of 4.5A (Ta) at 25°C. The gate-source threshold voltage is 2V @ 100μA and the maximum gate charge is 14nC @ 10V. This part has a popularity of medium and a supply and demand status of balance. It is packaged in a reel - TR and mounted with SMD (SMT) technology. The drain-source breakdown voltage is 30V and the maximum Rds On at Id,Vgs is 56 mOhm @ 2.2A, 10V. It is a discrete semiconductor product manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 056764-TPC6110(TE85L,F).

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
65+ $0.8130 $52.8450
150+ $0.6670 $100.0500
235+ $0.6460 $151.8100
320+ $0.6250 $200.0000
415+ $0.6050 $251.0750
555+ $0.5420 $300.8100
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 3,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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