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TPC6110 TE85L

Part No TPC6110 TE85L
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.5A VS6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Ta)
Gate-Source Threshold Voltage 2V @ 100μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 510pF @ 10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 56 mOhm @ 2.2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-6 (2.9x2.8)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 056763-TPC6110 TE85L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC6110 TE85L CAD Model

Description

The Toshiba Semiconductor and Storage electronic component has a part number of 056763-TPC6110 TE85L and is a P-Channel MOSFET with a maximum power dissipation of 700mW.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 56 mOhm @ 2.2A, 10V
  • Case: VS-6 (2.9x2.8)
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3853 $60.9354
42+ $2.7778 $116.6676
65+ $2.6912 $174.9280
89+ $2.6045 $231.8005
115+ $2.5167 $289.4205
154+ $2.2569 $347.5626
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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