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Same model may have multiple batches, images only for reference.
TPC8018-H(TE12L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8018-H(TE12L,Q)

Part No TPC8018-H(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18A SOP8 2-6J1B
Datasheet
TPC8018-H(TE12L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 2265pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 213264-TPC8018-H(TE12L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8018-H(TE12L,Q) CAD Model

Description

Toshiba Semiconductor and Storage's TPC8018-H(TE12L,Q) is an N-channel MOSFET that is suitable for various applications.

  • Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Supply and Demand Status: Balanced
  • Win Source Part Number: 213264-TPC8018-H(TE12L,Q)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.3356 $73.3424
8+ $15.0450 $120.3600
12+ $14.5749 $174.8988
17+ $14.1049 $239.7833
22+ $13.6348 $299.9656
29+ $12.2245 $354.5105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,720 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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