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TPC8016-H(T2LIBM3Q)

Part No TPC8016-H(T2LIBM3Q)
Manufacturer Toshiba Semiconductor and Storage
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 06+
Reference case SOP8
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 727966-TPC8016-H(T2LIBM3Q)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8016-H(T2LIBM3Q) CAD Model

Description

The TPC8016-H(T2LIBM3Q) is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba Semiconductor and Storage. It is designed for power management applications, such as load switching, power supplies, and motor control, where a P-channel MOSFET is required.

Applications:

  • Load switching: Used to control power to various loads in electronic circuits.
  • Power supplies: Used in DC-DC converters and other power supply circuits.
  • Motor control: Used to control the speed and direction of DC motors.
  • Battery management systems: Used to protect batteries from overcharging and discharging.
  • Power management in portable devices: Used in smartphones, laptops, and other portable devices.

Features:

  • Low on-resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Low gate charge (Qg): Enables fast switching speeds.
  • Small package: Allows for compact circuit designs.
  • AEC-Q101 qualified: Suitable for automotive applications.
  • RoHS compliant: Meets environmental standards for hazardous substance restrictions.

Benefits:

  • Increased efficiency: Low on-resistance minimizes power dissipation, improving overall system efficiency.
  • Fast switching speeds: Low gate charge enables efficient high-frequency operation.
  • Compact design: Small package allows for high-density circuit layouts.
  • Robust performance: AEC-Q101 qualification ensures reliable performance in automotive applications.
  • Reduced heat generation: Low power loss translates to less heat, simplifying thermal management.

Technical Specifications:

The TPC8016-H(T2LIBM3Q) is a P-channel MOSFET with a drain-source voltage (VDS) of -30V. It has a low on-resistance (RDS(on)), typically around 16 mΩ at a gate-source voltage (VGS) of -10V. The continuous drain current (ID) is typically -10A. It is typically packaged in a SOP-8 package. The gate charge (Qg) is low, enabling fast switching speeds.

This P-channel MOSFET is well-suited for a variety of power management applications where efficient and reliable switching is required.

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