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TPC8029

Part No TPC8029
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 219735-TPC8029
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8029 CAD Model

Description

The TPC8029 is an N-channel MOSFET from Toshiba Semiconductor and Storage, optimized for power management applications requiring high efficiency and compact size. Utilizing Toshiba's advanced process technology, this MOSFET achieves low on-resistance and fast switching speeds. This makes it ideal for use in DC-DC converters and load switches, where minimizing power loss is crucial.

Applications

  • DC-DC Converters
  • Load Switches
  • Power Management Circuits in Portable Devices
  • Motor Control
  • LED Lighting

Features

  • Low On-Resistance: Minimizes conduction losses for enhanced efficiency.
  • Fast Switching Speed: Reduces switching losses at higher frequencies.
  • Compact Package: Allows for high-density board layouts.
  • Avalanche Rated: Provides robustness against voltage transients.
  • RoHS Compliant: Meets environmental standards.

Benefits

  • Increased Energy Efficiency: Reduced on-resistance and switching losses contribute to improved overall efficiency in power conversion.
  • Reduced Heat Dissipation: Low power losses mean less heat is generated, simplifying thermal management.
  • Smaller Footprint: The compact package enables more compact and lightweight designs.
  • Improved Reliability: Avalanche rating provides added protection against voltage spikes.
  • Environmentally Sound: RoHS compliance ensures adherence to environmental regulations.

Additional Details

The TPC8029 typically has a drain-source voltage (V<sub>DSS) rating of 30V. The continuous drain current (I<sub>D) varies depending on the package type and thermal conditions but is generally around 6A. The gate-source voltage (V<sub>GS) is typically ±20V. The on-resistance (R<sub>DS(on)) is generally around 24 mΩ at V<sub>GS = 10V. Always refer to the official Toshiba datasheet for the precise specifications for your specific application, as parameters can vary slightly based on manufacturing variations and package styles. The device is available in surface mount packages, such as SOP-8.

When using the TPC8029, pay careful attention to thermal management. Ensure adequate heat sinking or PCB design to keep the device within its safe operating temperature range. The datasheet will provide detailed information on thermal resistance and power dissipation capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3622 $60.5196
42+ $2.7593 $115.8906
65+ $2.6727 $173.7255
90+ $2.5860 $232.7400
116+ $2.5006 $290.0696
155+ $2.2419 $347.4945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,427 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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