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Same model may have multiple batches, images only for reference.
TPC8035-H(TF12L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8035-H(TF12L,Q)

Part No TPC8035-H(TF12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 30V 18A SOP8 2-6J1B
Datasheet
TPC8035-H(TF12L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) @ Vgs 82nC @ 10V
Input Capacitance (Ciss) @ Vds 7800pF @ 10V
Operating Temperature Range 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.173", 4.40mm Width)
Manufacturer Device Package 8-SOP (5.5x6.0)
Win Source Part Number 219739-TPC8035-H(TF12L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8035-H(TF12L,Q) CAD Model

Description

The Toshiba TPC8035-H(TF12L,Q) is a MOSFET N-Channel, Metal Oxide transistor with a drain to source voltage of 30V and a continuous drain current of 18A.

  • Type: MOSFET N-Channel, Metal Oxide
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 18A
  • Rds On (Max): 3.2 mOhm
  • Vgs(th) (Max): 2.3V
  • Gate Charge: 82nC
  • Input Capacitance: 7800pF
  • Package: 8-SOIC (0.173", 4.40mm Width)
  • Application: Surface mount

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