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Same model may have multiple batches, images only for reference.
TPC8062-H,LQ(CM Real Image
Same model may have multiple batches, images only for reference.

TPC8062-H,LQ(CM

Part No TPC8062-H,LQ(CM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18A 8SOP / N-Channel 30 V 18A (Ta) 1W (Ta) Surface Mount 8-SOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVII-H
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.3V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.173", 4.40mm Width)
Base Product Number TPC8062
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000 pcs
Win Source Part Number 1383691-TPC8062-H,LQ(CM
Ultra Librarian 3D Model Ultra Librarian TPC8062-H,LQ(CM CAD Model

Description

The TPC8062-H,LQ(CM) is a single N-channel MOSFET in an 8-SOIC (0.173", 4.40mm Width) package.

  • Series: U-MOSVII-H
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 18A @ 25°C
  • On-Resistance: 5.8mOhm
  • Gate Threshold Voltage: 2.3V
  • Gate Charge: 34nC
  • Mounting Type: Surface Mount
  • Maximum Temperature: 150°C
  • Manufacturer: Toshiba Semiconductor and Storage
  • Standard Package: 3,000 pcs

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