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Same model may have multiple batches, images only for reference.
TPC8109(TE12L) Real Image
Same model may have multiple batches, images only for reference.

TPC8109(TE12L)

Part No TPC8109(TE12L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 10A 8-SOP
Datasheet
TPC8109(TE12L) Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2260pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 103712-TPC8109(TE12L)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8109(TE12L) CAD Model

Description

The Toshiba Semiconductor and Storage 103712-TPC8109(TE12L) is a P-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Supply and demand status: balanced
  • Packaging: cut reel
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 1W (Ta)
  • Temperature Range: 150°C (TJ)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Input Capacitance: 2260pF @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2737 $58.8455
515+ $0.2252 $115.9780
795+ $0.2183 $173.5485
1,095+ $0.2114 $231.4830
1,415+ $0.2044 $289.2260
1,900+ $0.1825 $346.7500
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Availability: 1,980 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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