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Same model may have multiple batches, images only for reference.
TPC8110(TE12L) Real Image
Same model may have multiple batches, images only for reference.

TPC8110(TE12L)

Part No TPC8110(TE12L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 8A SOP8 2-6J1B
Datasheet
TPC8110(TE12L) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 2180pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 056787-TPC8110(TE12L)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8110(TE12L) CAD Model

Description

The Toshiba Semiconductor and Storage TPC8110(TE12L) is a P-Channel MOSFET with a drain-source breakdown voltage of 40V.

  • Continuous Drain Current at 25°C: 8A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Rds On at Id,Vgs: 25 mOhm @ 4A, 10V
  • Supply and demand status: balance
  • Mounting: SMD (SMT)

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