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TPC8125,LQ

Part No TPC8125,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH Si 30V 10A 8-Pin / MOSFET P-CH 30V 10A 8SOP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 500μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 2580pF @ 10V
Maximum Gate-Source Voltage +20V, -25V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 056798-TPC8125,LQ
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name TPC8125
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TPC8125,LQ CAD Model

Description

The Toshiba Semiconductor and Storage 056798-TPC8125,LQ is a MOSFET transistor used in various applications. This P-Channel transistor has a maximum power dissipation of 1W (Ta) and a drain-source breakdown voltage of 30V. The supply and demand status of this product is currently balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3396 $59.4300
415+ $0.2795 $115.9925
645+ $0.2703 $174.3435
885+ $0.2622 $232.0470
1,145+ $0.2529 $289.5705
1,535+ $0.2264 $347.5240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,500 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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