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Same model may have multiple batches, images only for reference.
TPC8129(LQ,S) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8129(LQ,S)

Part No TPC8129(LQ,S)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9A 8SOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 200μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1650pF @ 10V
Maximum Gate-Source Voltage +20V, -25V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 213271-TPC8129(LQ,S)
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name TPC8129
Introduction Date August 25, 2010
ECCN EAR99
Country of Origin China
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian TPC8129(LQ,S) CAD Model

Description

The Toshiba Semiconductor and Storage TPC8129(LQ,S) is a MOSFET that belongs to the discrete semiconductor products category.

  • Type: P-Channel MOSFET
  • Power Dissipation: 1W (Ta)
  • Supply and Demand: balanced
  • Manufacturer: Toshiba Semiconductor and Storage
  • Introduction Date: August 25, 2010
  • Estimated EOL Date: 2026
  • Rds on @ Id, Vgs: 22 mOhm @ 4.5A, 10V
  • Alternative Part Cross-Reference: SI4835DY-T1-E3, SI4835DY-T1, and Si4835DY-E3

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