The Toshiba Semiconductor and Storage 382824 is a 2 N-Channel (Dual) FET with a logic level gate, which is suitable for use in discrete semiconductor products.

• Package: 8-SOP (5.5x6.0)
• Operating Temperature: up to 150°C (TJ)
• Power Dissipation: 450mW
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current @ 25°C: 5A
• Gate-Source Threshold Voltage: 2.3V @ 1mA
• Gate Charge: 11nC @ 10V
• Input Capacitance: 625pF @ 10V
• Rds On @ Id,Vgs: 50 mOhm @ 2.5A, 10V
• Availability: in the open market
• Supply and Demand: balance