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Same model may have multiple batches, images only for reference.
TPC8228-H,LQ
Same model may have multiple batches, images only for reference.

TPC8228-H,LQ

Part No TPC8228-H,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Arrays
Description TPC8228-H,LQ
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI-H
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3.8A
Rds On (Max) @ Id, Vgs 57mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V
Power - Max 1.5W (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number TPC8228
Standard Package 2,500 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 990448-TPC8228-H,LQ
Ultra Librarian 3D Model Ultra Librarian TPC8228-H,LQ CAD Model

Description

The TPC8228-H is a dual N-Channel MOSFET array from Toshiba Semiconductor and Storage.

  • Application: Discrete Semiconductor
  • Series: U-MOSVI-H
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 3.8A
  • Maximum Rds On: 57mOhm
  • Gate Charge: 11nC @ 10V
  • Input Capacitance: 640pF @ 10V
  • Operating Temperature Range: 150°C
  • Package: 8-SOIC
  • Status: Active
  • Standard Package: 2,500 pcs
  • Mounting: Surface Mount

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