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Same model may have multiple batches, images only for reference.
TPC8405 (TE12L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8405 (TE12L,Q)

Part No TPC8405 (TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6A/4.5A 8SOP
Datasheet
TPC8405 (TE12L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A, 4.5A
Maximum Rds On at Id,Vgs 26 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1240pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Win Source Part Number 043257-TPC8405 (TE12L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8405 (TE12L,Q) CAD Model

Description

The Toshiba Semiconductor and Storage 043257-TPC8405 (TE12L,Q) is an N and P-channel logic level gate FET with a drain-source breakdown voltage of 30V and a maximum power dissipation of 450mW.

  • Continuous Drain Current: 6A and 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Rds On: 26 mOhm @ 3A, 10V
  • Maximum Input Capacitance: 1240pF @ 10V
  • Mounted Using: SMD (SMT) technology
  • Case / Package: 8-SOP (5.5x6.0)
  • Categorized As: Discrete Semiconductor Products
  • Is Now: obsolete(EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,950 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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