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TPC8A02-H

Part No TPC8A02-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A SOP8 2-6J1B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1970pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 043258-TPC8A02-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8A02-H CAD Model

Description

The Toshiba Semiconductor and Storage 043258-TPC8A02-H is an obsolete (EOL) N-channel MOSFET that has a medium popularity in the market.

  • This MOSFET Is Designed For: use in various applications such as power supplies, motor drives, and lighting systems
  • Maximum Power Dissipation: 1W (Ta)
  • Maximum Continuous Drain Current: 16A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Comes In: an 8-SOP (5.5x6.0) package and has a dimension of 8-SOIC (0.173", 4.40mm Width)

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,710 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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