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Same model may have multiple batches, images only for reference.
TPC8A06-H Real Image
Same model may have multiple batches, images only for reference.

TPC8A06-H

Part No TPC8A06-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8SOP
Datasheet
TPC8A06-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 1800pF @ 10V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Maximum Rds On at Id,Vgs 10.1 mOhm @ 6A, 10V
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 056813-TPC8A06-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8A06-H CAD Model

Description

The Toshiba Semiconductor and Storage 056813-TPC8A06-H MOSFET is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • It Features: a Schottky diode (body) and has a drain-source breakdown voltage of 30V
  • Continuous Drain Current: 12A @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 19nC @ 10V
  • Maximum Input Capacitance: 1800pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 10.1 mOhm @ 6A and 10V
  • 8-SOP (5.5x6.0) Package: is suitable for surface-mount applications
  • Supply and Demand Status: is balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
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Availability: 6,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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