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TPC8A07-H

Part No TPC8A07-H
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description HIgh Effciency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 219832-TPC8A07-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8A07-H CAD Model

Description

The TPC8A07-H is a P-channel MOSFET from Toshiba Semiconductor and Storage, designed for a variety of power switching and control applications.

Applications

  • DC-DC converters
  • Load switches
  • Power management in portable devices
  • Motor control circuits

Features

  • P-Channel MOSFET
  • Low on-resistance (RDS(ON))
  • High-speed switching
  • Lead-free package
  • Surface Mount Device (SMD)

Benefits

  • Improved energy efficiency
  • Reduced power dissipation
  • Compact design
  • Environmentally friendly
  • Reliable performance

Additional Details

The TPC8A07-H P-channel MOSFET is characterized by its low on-resistance, which contributes to reduced power loss and improved efficiency in switching applications. Its fast switching speed makes it suitable for high-frequency DC-DC converters and other power management circuits. The lead-free package is compliant with RoHS standards, making it an environmentally conscious choice. The surface mount design facilitates easy integration into circuit boards and enables compact designs. This MOSFET is commonly used in applications such as portable devices, where power efficiency and small size are crucial. When using this device, ensure proper gate drive voltage and consider thermal management to prevent overheating. The datasheet provides detailed information on the electrical characteristics, thermal performance, and absolute maximum ratings of the device. Always consult the datasheet before using this component in any application. The 'H' suffix indicates a lead-free and RoHS-compliant package. Ensure that the gate-source voltage (VGS) remains within the specified limits to prevent damage to the device. Appropriate heat sinking may be necessary depending on the application's power dissipation requirements. The part is designed to provide efficient and reliable power switching for various applications.

This MOSFET is also suitable for power management circuits requiring low on-resistance. The device is designed to be used in various systems that need power switching and control.

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