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Same model may have multiple batches, images only for reference.
TPCA8023-H
Same model may have multiple batches, images only for reference.

TPCA8023-H

Part No TPCA8023-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A SOP-8 ADV
Datasheet
TPCA8023-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 2150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 12.9 mOhm @ 11A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 213279-TPCA8023-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8023-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET N-Channel is a high-power transistor that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 21A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 21nC @ 10V
  • Max Rds On @ Id, Vgs: 12.9 mOhm @ 11A, 10V
  • Max Input Capacitance: 2150pF @ 10V
  • Package: 8-SOP Advance (5x5)
  • Operating Temperature Range: 150°C (TJ)
  • Series: MOSFET

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Pricing & Ordering

Quantity Unit Price Ext. Price
445+ $0.1305 $58.0725
1,080+ $0.1074 $115.9920
1,670+ $0.1040 $173.6800
2,300+ $0.1005 $231.1500
2,945+ $0.0982 $289.1990
3,950+ $0.0878 $346.8100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,382 pieces
MOQ: 445 pcs
Order Increment : 1 pcs
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