The TPCA8A02-H MOSFET from Toshiba Semiconductor and Storage is an N-channel MOSFET with a power dissipation of 1.6W (Ta), 45W (Tc).

• Packaging: It comes in a reel-tr package and falls under the category of discrete semiconductor products.
• Supply and Demand Status: The supply and demand status of the product is balanced, and it has a dimension of 8-PowerVDFN and a case/package of 8-SOP Advance (5x5).
• Drive Voltage: 4.5V, 10V
• Gate-Source Threshold Voltage: 2.3V @ 1mA
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On: 5.3 mOhm @ 17A, 10V
• Maximum Gate Charge: 36nC @ 10V
• Maximum Input Capacitance: 3430pF @ 10V
• Operating Temperature Range: 150°C (TJ)
• Drain-Source Breakdown Voltage: 30V