The Toshiba Semiconductor and Storage 056654-TK55D10J1 is a MOSFET discrete semiconductor product in the N-channel polarity.

• It is an obsolete (EOL) product with a limited supply and demand status.
• The device package is TO-220(W) with a dimension of TO-220-3.
• The drain-source breakdown voltage is 100V, and the continuous drain current @ 25°C is 55A (Ta).
• The gate-source threshold voltage is 2.3V @ 1mA.
• The maximum gate charge is 110nC @ 10V, and the maximum input capacitance is 5700pF @ 10V.
• The maximum gate-source voltage is ±20V, and the maximum Rds On @ Id, Vgs is 10.5 mOhm @ 27A, 10V.