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Same model may have multiple batches, images only for reference.
TPCC8006-H Real Image
Same model may have multiple batches, images only for reference.

TPCC8006-H

Part No TPCC8006-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22A 8TSON
Datasheet
TPCC8006-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 200μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 2200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 11A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON
Dimension 8-VDFN Exposed Pad
Win Source Part Number 097347-TPCC8006-H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCC8006-H CAD Model

Description

This electronic component is a MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Supply and Demand Status: sufficient
  • Status: The product is obsolete (EOL) and has a power dissipation of 700mW (Ta) and 27W (Tc).
  • Maximum Rds On: 8 mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 2.3V @ 200μA
  • Maximum Gate Charge: 27nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1930 $57.9000
730+ $0.1585 $115.7050
1,130+ $0.1535 $173.4550
1,560+ $0.1485 $231.6600
2,015+ $0.1436 $289.3540
2,695+ $0.1287 $346.8465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,774 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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