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Same model may have multiple batches, images only for reference.
PSMN4R3-100PS,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN4R3-100PS,127

Part No PSMN4R3-100PS,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO220AB / Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Rail
Datasheet
PSMN4R3-100PS,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9900pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 338W (Tc)
Rds On (Maximum) @ Id, Vgs 4.3 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 792632-PSMN4R3-100PS,127
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN4R3-100PS
Introduction Date October 27, 2011
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian PSMN4R3-100PS,127 CAD Model

Description

This electronic component is a MOSFET technology manufactured by Nexperia USA Inc.

  • Win Source Part Number: 792632-PSMN4R3-100PS,127
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 338W (Tc)
  • Maximum Rds On: 4.3 mOhm @ 25A, 10V
  • Mounting Type: Through Hole
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Maximum Vgs: ±20V
  • ECCN: EAR99
  • Recommended Use: Electronic Circuits

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